SRAM circuits with aligned gate electrodes

A device includes a Static Random Access Memory (SRAM) array, and an SRAM cell edge region abutting the SRAM array. The SRAM array and the SRAM cell edge region in combination include first gate electrodes having a uniform pitch. A word line driver abuts the SRAM cell edge region. The word line driv...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Liaw, Jhon Jhy, Fu, Shih-Chi, Chen, Yen-Huei, Tsui, Ren-Fen, Liang, Min-Chang, Chen, Fang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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