Redistribution layer metallic structure and method
The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic f...
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| creator | Chen, Yen-Yu Bih, Shih Wei Lin, Chun-Chih Lin, Chih-Wei Cheng, Wen-Hao Yeh, Sheng-Wei |
| description | The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US12040293B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US12040293B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US12040293B23</originalsourceid><addsrcrecordid>eNrjZDAKSk3JLC4pykwqLcnMz1PISaxMLVLITS1JzMnJTFYAypQml5QWpSok5qWAhDPyU3gYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXxosKGRgYmBkaWxk5ExMWoAFGEsuw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Redistribution layer metallic structure and method</title><source>esp@cenet</source><creator>Chen, Yen-Yu ; Bih, Shih Wei ; Lin, Chun-Chih ; Lin, Chih-Wei ; Cheng, Wen-Hao ; Yeh, Sheng-Wei</creator><creatorcontrib>Chen, Yen-Yu ; Bih, Shih Wei ; Lin, Chun-Chih ; Lin, Chih-Wei ; Cheng, Wen-Hao ; Yeh, Sheng-Wei</creatorcontrib><description>The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240716&DB=EPODOC&CC=US&NR=12040293B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240716&DB=EPODOC&CC=US&NR=12040293B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chen, Yen-Yu</creatorcontrib><creatorcontrib>Bih, Shih Wei</creatorcontrib><creatorcontrib>Lin, Chun-Chih</creatorcontrib><creatorcontrib>Lin, Chih-Wei</creatorcontrib><creatorcontrib>Cheng, Wen-Hao</creatorcontrib><creatorcontrib>Yeh, Sheng-Wei</creatorcontrib><title>Redistribution layer metallic structure and method</title><description>The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAKSk3JLC4pykwqLcnMz1PISaxMLVLITS1JzMnJTFYAypQml5QWpSok5qWAhDPyU3gYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXxosKGRgYmBkaWxk5ExMWoAFGEsuw</recordid><startdate>20240716</startdate><enddate>20240716</enddate><creator>Chen, Yen-Yu</creator><creator>Bih, Shih Wei</creator><creator>Lin, Chun-Chih</creator><creator>Lin, Chih-Wei</creator><creator>Cheng, Wen-Hao</creator><creator>Yeh, Sheng-Wei</creator><scope>EVB</scope></search><sort><creationdate>20240716</creationdate><title>Redistribution layer metallic structure and method</title><author>Chen, Yen-Yu ; Bih, Shih Wei ; Lin, Chun-Chih ; Lin, Chih-Wei ; Cheng, Wen-Hao ; Yeh, Sheng-Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12040293B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, Yen-Yu</creatorcontrib><creatorcontrib>Bih, Shih Wei</creatorcontrib><creatorcontrib>Lin, Chun-Chih</creatorcontrib><creatorcontrib>Lin, Chih-Wei</creatorcontrib><creatorcontrib>Cheng, Wen-Hao</creatorcontrib><creatorcontrib>Yeh, Sheng-Wei</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Yen-Yu</au><au>Bih, Shih Wei</au><au>Lin, Chun-Chih</au><au>Lin, Chih-Wei</au><au>Cheng, Wen-Hao</au><au>Yeh, Sheng-Wei</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Redistribution layer metallic structure and method</title><date>2024-07-16</date><risdate>2024</risdate><abstract>The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Redistribution layer metallic structure and method |
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