Superjunction transistor device and method for forming a superjunction transistor device

A method for forming a drift region of a superjunction transistor and a superjunction transistor device are disclosed. The method includes forming first regions of a first doping type and second regions of a second type in a semiconductor body such that the first and second regions are arranged alte...

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Bibliographische Detailangaben

Hauptverfasser:	Weber, Hans, Muri, Ingo, Tutuc, Daniel
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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