Semiconductor device configured for gate dielectric monitoring

The disclosed technology relates generally to semiconductor devices, and more particularly to semiconductor devices including a metal-oxide-semiconductor (MOS) transistor and are configured for accelerating and monitoring degradation of the gate dielectric of the MOS transistor. In one aspect, a sem...

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Bibliographische Detailangaben
Hauptverfasser: Heffernan, Colm Patrick, Meskell, John P, Forde, Mark, Geary, Shane, Coyne, Edward John
Format: Patent
Sprache:eng
Schlagworte:
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