Metrology method for measuring an exposed pattern and associated metrology apparatus

Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist...

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Bibliographische Detailangaben
1. Verfasser: Cottaar, Jeroen
Format: Patent
Sprache:eng
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