Memory structures and methods for forming the same

A memory device includes a substrate, an electrical channel layer, a first electrode, a resistive switching layer, a second electrode, and a conductive structure. The electrical channel layer is disposed on the substrate. The first electrode is disposed on the substrate and extends into the electric...

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Hauptverfasser:	Chang, Shuo-Che, Wu, Bo-Lun, Kuo, Tse-Mian, Chang, Wei-Che, Hsu, Po-Yen
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
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creator	Chang, Shuo-Che Wu, Bo-Lun Kuo, Tse-Mian Chang, Wei-Che Hsu, Po-Yen
description	A memory device includes a substrate, an electrical channel layer, a first electrode, a resistive switching layer, a second electrode, and a conductive structure. The electrical channel layer is disposed on the substrate. The first electrode is disposed on the substrate and extends into the electrical channel layer. The resistive switching layer is disposed between the first electrode and the electrical channel layer. The second electrode is disposed on the electrical channel layer. The conductive structure connects the electrical channel layer and the second electrode.
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title	Memory structures and methods for forming the same
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