Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

A voltage withstanding structure disposed in an edge termination region is a spatial modulation junction termination extension (JTE) structure formed by a combination of a JTE structure and a field limiting ring (FLR) structure. All FLRs configuring the FLR structure are surrounded by an innermost o...

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Bibliographische Detailangaben

1. Verfasser:	Kinoshita, Akimasa
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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