Semiconductor device

A device includes a first III-V compound layer, a second III-V compound layer, source and drain structures, a gate structure, and a gate field plate. The second III-V compound layer is over the first III-V compound layer. The source and drain structures are over the second III-V compound layer and s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lin, Hsin-Chih, Chen, Lieh-Chuan, Chu, Po-Tao, Kuo, Chien-Li, Wang, Shen-Ping, You, Jheng-Sheng, Huang, Kun-Ming
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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