Method of determining defective die containing non-volatile memory cells
A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is p...
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| creator | Festes, Gilles Kim, Jinho Tee, Latt Bertello, Bernard Villard, Bruno Fung, Cynthia Ghazavi, Parviz Thiery, Jean Francois Decobert, Catherine Tkachev, Yuri Jourba, Serguei Luo, Fan Do, Nhan |
| description | A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is performed to determine a second number N2 of the memory cells having a read current not exceeding a target read current RC2. The target read current RC2 is equal to the lowest read current RC1 plus a predetermined current value. The die is determined to be acceptable if the second number N2 is determined to exceed the first number N1 plus a predetermined number. The die is determined to be defective if the second number N2 is determined not to exceed the first number N1 plus the predetermined number. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US12020762B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US12020762B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US12020762B23</originalsourceid><addsrcrecordid>eNrjZPDwTS3JyE9RyE9TSEktSS3KzczLzEsHstNSk0syy1IVUjJTFZLz80oSIRJ5-Xm6Zfk5iSWZOakKuam5-UWVCsmpOTnFPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7UkPjTY0MjAyMDczMjJyJgYNQDANDSm</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of determining defective die containing non-volatile memory cells</title><source>esp@cenet</source><creator>Festes, Gilles ; Kim, Jinho ; Tee, Latt ; Bertello, Bernard ; Villard, Bruno ; Fung, Cynthia ; Ghazavi, Parviz ; Thiery, Jean Francois ; Decobert, Catherine ; Tkachev, Yuri ; Jourba, Serguei ; Luo, Fan ; Do, Nhan</creator><creatorcontrib>Festes, Gilles ; Kim, Jinho ; Tee, Latt ; Bertello, Bernard ; Villard, Bruno ; Fung, Cynthia ; Ghazavi, Parviz ; Thiery, Jean Francois ; Decobert, Catherine ; Tkachev, Yuri ; Jourba, Serguei ; Luo, Fan ; Do, Nhan</creatorcontrib><description>A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is performed to determine a second number N2 of the memory cells having a read current not exceeding a target read current RC2. The target read current RC2 is equal to the lowest read current RC1 plus a predetermined current value. The die is determined to be acceptable if the second number N2 is determined to exceed the first number N1 plus a predetermined number. The die is determined to be defective if the second number N2 is determined not to exceed the first number N1 plus the predetermined number.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240625&DB=EPODOC&CC=US&NR=12020762B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240625&DB=EPODOC&CC=US&NR=12020762B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Festes, Gilles</creatorcontrib><creatorcontrib>Kim, Jinho</creatorcontrib><creatorcontrib>Tee, Latt</creatorcontrib><creatorcontrib>Bertello, Bernard</creatorcontrib><creatorcontrib>Villard, Bruno</creatorcontrib><creatorcontrib>Fung, Cynthia</creatorcontrib><creatorcontrib>Ghazavi, Parviz</creatorcontrib><creatorcontrib>Thiery, Jean Francois</creatorcontrib><creatorcontrib>Decobert, Catherine</creatorcontrib><creatorcontrib>Tkachev, Yuri</creatorcontrib><creatorcontrib>Jourba, Serguei</creatorcontrib><creatorcontrib>Luo, Fan</creatorcontrib><creatorcontrib>Do, Nhan</creatorcontrib><title>Method of determining defective die containing non-volatile memory cells</title><description>A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is performed to determine a second number N2 of the memory cells having a read current not exceeding a target read current RC2. The target read current RC2 is equal to the lowest read current RC1 plus a predetermined current value. The die is determined to be acceptable if the second number N2 is determined to exceed the first number N1 plus a predetermined number. The die is determined to be defective if the second number N2 is determined not to exceed the first number N1 plus the predetermined number.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDwTS3JyE9RyE9TSEktSS3KzczLzEsHstNSk0syy1IVUjJTFZLz80oSIRJ5-Xm6Zfk5iSWZOakKuam5-UWVCsmpOTnFPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7UkPjTY0MjAyMDczMjJyJgYNQDANDSm</recordid><startdate>20240625</startdate><enddate>20240625</enddate><creator>Festes, Gilles</creator><creator>Kim, Jinho</creator><creator>Tee, Latt</creator><creator>Bertello, Bernard</creator><creator>Villard, Bruno</creator><creator>Fung, Cynthia</creator><creator>Ghazavi, Parviz</creator><creator>Thiery, Jean Francois</creator><creator>Decobert, Catherine</creator><creator>Tkachev, Yuri</creator><creator>Jourba, Serguei</creator><creator>Luo, Fan</creator><creator>Do, Nhan</creator><scope>EVB</scope></search><sort><creationdate>20240625</creationdate><title>Method of determining defective die containing non-volatile memory cells</title><author>Festes, Gilles ; Kim, Jinho ; Tee, Latt ; Bertello, Bernard ; Villard, Bruno ; Fung, Cynthia ; Ghazavi, Parviz ; Thiery, Jean Francois ; Decobert, Catherine ; Tkachev, Yuri ; Jourba, Serguei ; Luo, Fan ; Do, Nhan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12020762B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Festes, Gilles</creatorcontrib><creatorcontrib>Kim, Jinho</creatorcontrib><creatorcontrib>Tee, Latt</creatorcontrib><creatorcontrib>Bertello, Bernard</creatorcontrib><creatorcontrib>Villard, Bruno</creatorcontrib><creatorcontrib>Fung, Cynthia</creatorcontrib><creatorcontrib>Ghazavi, Parviz</creatorcontrib><creatorcontrib>Thiery, Jean Francois</creatorcontrib><creatorcontrib>Decobert, Catherine</creatorcontrib><creatorcontrib>Tkachev, Yuri</creatorcontrib><creatorcontrib>Jourba, Serguei</creatorcontrib><creatorcontrib>Luo, Fan</creatorcontrib><creatorcontrib>Do, Nhan</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Festes, Gilles</au><au>Kim, Jinho</au><au>Tee, Latt</au><au>Bertello, Bernard</au><au>Villard, Bruno</au><au>Fung, Cynthia</au><au>Ghazavi, Parviz</au><au>Thiery, Jean Francois</au><au>Decobert, Catherine</au><au>Tkachev, Yuri</au><au>Jourba, Serguei</au><au>Luo, Fan</au><au>Do, Nhan</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of determining defective die containing non-volatile memory cells</title><date>2024-06-25</date><risdate>2024</risdate><abstract>A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is performed to determine a second number N2 of the memory cells having a read current not exceeding a target read current RC2. The target read current RC2 is equal to the lowest read current RC1 plus a predetermined current value. The die is determined to be acceptable if the second number N2 is determined to exceed the first number N1 plus a predetermined number. The die is determined to be defective if the second number N2 is determined not to exceed the first number N1 plus the predetermined number.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Method of determining defective die containing non-volatile memory cells |
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