Integrated circuit with thicker metal lines on lower metallization layer

An IC structure includes first, second, third, and fourth transistors on a substrate, a first net and a second net. The first net includes a plurality of first metal lines routed on a first metallization layer, and a plurality of first metal vias electrically connecting the plurality of first metal...

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Bibliographische Detailangaben

Hauptverfasser:	Hou, Yung-Chin, Wang, Chung-Hsing, Chang, Kuang-Hung, Hou, Yuan-Te
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES
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