RRAM with high work function cap

Embodiments of present invention provide a resistive random-access memory (RRAM) cell. The RRAM cell includes a bottom electrode; a metal oxide layer, the metal oxide layer having a central portion that is in direct contact with the bottom electrode, a peripheral portion that is nonplanar with the c...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Seo, Soon-Cheon, Silvestre, Mary Claire Micaller, Liu, Xuefeng, Ando, Takashi, Park, Chanro, Sung, Min Gyu
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Embodiments of present invention provide a resistive random-access memory (RRAM) cell. The RRAM cell includes a bottom electrode; a metal oxide layer, the metal oxide layer having a central portion that is in direct contact with the bottom electrode, a peripheral portion that is nonplanar with the central portion, and a vertical portion between the central portion and the peripheral portion; and a top electrode directly above the metal oxide layer. A method of manufacturing the RRAM cell is also provided.