Patterning methods for semiconductor devices and structures resulting therefrom

Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over a target layer, forming a plurality of spacers over the first mask layer, and forming a second mask layer over the plurality of spacers and patterning the second mask la...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chen, Chih-Hao, Chen, Wen-Yen, Peng, Tai-Yen
Format: Patent
Sprache:eng
Schlagworte:
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