High step coverage tungsten deposition

Methods of depositing a tungsten nucleation layers that achieve very good step coverage are provided. The methods involve a sequence of alternating pulses of a tungsten-containing precursor and a boron-containing reducing agent, while co-flowing hydrogen (H2) with the boron-containing reducing agent...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chandrashekar, Anand, Zhang, Xing, Yang, Tsung-Han, Bowes, Michael
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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