Low-stress passivation layer

Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a redistribution layer including a first conductive feature and a second conductive feature, a first contact feature disposed over and electrically coupled to the first conductive f...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lin, Chun-Li, Chen, Dian-Hau, Shen, Hsiang-Ku
Format: Patent
Sprache:eng
Schlagworte:
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