Bipolar transistors with multilayer collectors

Bipolar transistors with multilayer collectors

A semiconductor device and fabrication method are described for manufacturing a heterojunction bipolar transistor by forming a silicon collector region in a substrate which includes a lower collector layer, a dopant diffusion barrier layer, and an upper collector layer, where the formation of the do...

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Hauptverfasser: Magnee, Petrus Hubertus Cornelis, Donkers, Johannes Josephus Theodorus Marinus, Werkman, Ronald Willem Arnoud
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Magnee, Petrus Hubertus Cornelis
Donkers, Johannes Josephus Theodorus Marinus
Werkman, Ronald Willem Arnoud
description A semiconductor device and fabrication method are described for manufacturing a heterojunction bipolar transistor by forming a silicon collector region in a substrate which includes a lower collector layer, a dopant diffusion barrier layer, and an upper collector layer, where the formation of the dopant diffusion barrier layer reduces diffusion of dopants from the lower collector layer into the upper collector layer during one or more subsequent manufacturing steps which are used to form a trench isolation region in the substrate along with a heterogeneous base region and a silicon emitter region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Bipolar transistors with multilayer collectors
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