Semiconductor device having spacer residue

A device includes a semiconductive fin, an isolation structure, a gate structure, dielectric spacers, and source/drain epitaxial structures. The isolation structure surrounds a bottom portion of the semiconductive fin. The gate structure is over the semiconductive fin. The dielectric spacers are on...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wang, Sung-Li, Tsai, Pang-Yen, Okuno, Yasutoshi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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