Method for forming RuSi film and substrate processing system

A method of forming a RuSi film, the method includes adsorbing silicon in a recess that is formed in a substrate and includes an insulating film by supplying a silicon-containing gas to the substrate, forming a Ru film in the recess by supplying a Ru-containing precursor to the recess in which the s...

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Bibliographische Detailangaben
Hauptverfasser:	Ishizaka, Tadahiro, Noro, Naotaka
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of forming a RuSi film, the method includes adsorbing silicon in a recess that is formed in a substrate and includes an insulating film by supplying a silicon-containing gas to the substrate, forming a Ru film in the recess by supplying a Ru-containing precursor to the recess in which the silicon is adsorbed, and forming a RuSi film by supplying a silicon-containing gas to the recess in which the Ru film is formed.