CMOS over array of 3-D DRAM device

Disclosed are 3-D DRAM devices and methods of forming 3-D DRAM devices. One method may include forming a stack of DRAM device layers, forming a MOS substrate directly atop the stack of alternating DRAM device layers, and forming a trench through the MOS substrate and the stack of DRAM device layers....

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Hauptverfasser:	Fishburn, Fred, Varghese, Sony
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
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creator	Fishburn, Fred Varghese, Sony
description	Disclosed are 3-D DRAM devices and methods of forming 3-D DRAM devices. One method may include forming a stack of DRAM device layers, forming a MOS substrate directly atop the stack of alternating DRAM device layers, and forming a trench through the MOS substrate and the stack of DRAM device layers. The method may further include depositing a protection layer over the MOS substrate, wherein the protection layer is deposited at a non-zero angle of inclination relative to a vertical extending from a top surface of the MOS substrate.
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title	CMOS over array of 3-D DRAM device
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