Metal-insulator-metal capacitor with top contact

Metal-insulator-metal capacitor with top contact

Disclosed are examples of a device and method of fabricating a device including a first top contact, a second top contact, adjacent the first top contact, a first mesa disposed below the first top contact and a second mesa disposed below the second top contact. A first plate of a metal-insulator-met...

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Hauptverfasser: Zhu, John Jianhong, Nallapati, Giridhar, Ge, Lixin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Zhu, John Jianhong
Nallapati, Giridhar
Ge, Lixin
description Disclosed are examples of a device and method of fabricating a device including a first top contact, a second top contact, adjacent the first top contact, a first mesa disposed below the first top contact and a second mesa disposed below the second top contact. A first plate of a metal-insulator-metal (MIM) capacitor is disposed below the first top contact and electrically coupled to the first top contact. A first insulator of the MIM capacitor is disposed on the first plate. A second plate of the MIM capacitor is disposed on the first insulator and electrically coupled to the second top contact. A second insulator of the MIM capacitor is disposed on the second plate. A third plate of the MIM capacitor is disposed on the second insulator and electrically coupled to the first top contact.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Metal-insulator-metal capacitor with top contact
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