Wafer stacking structure and manufacturing method thereof
A wafer stack structure includes an interlayer, a first wafer, and a second wafer. The interlayer has a first surface and a second surface opposite to the first surface. The intermediate layer includes a dielectric material layer and a redistribution layer embedded in the dielectric material layer....
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Lu, Chun-Lin Lin, Jium-Ming Chang, Shou-Zen |
description | A wafer stack structure includes an interlayer, a first wafer, and a second wafer. The interlayer has a first surface and a second surface opposite to the first surface. The intermediate layer includes a dielectric material layer and a redistribution layer embedded in the dielectric material layer. The first wafer is disposed on the first surface of the interlayer. The second wafer is disposed on the second surface of the interlayer. The second wafer is electrically connected to the first wafer through the redistribution layer of the interlayer. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11967558B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11967558B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11967558B23</originalsourceid><addsrcrecordid>eNrjZLAMT0xLLVIoLklMzs7MSwcyikqTS0qLUhUS81IUchPzStMSQXyQXG5qSUZ-ikJJRmpRan4aDwNrWmJOcSovlOZmUHRzDXH20E0tyI9PLS5ITE7NSy2JDw02NLQ0Mzc1tXAyMiZGDQCDAy93</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Wafer stacking structure and manufacturing method thereof</title><source>esp@cenet</source><creator>Lu, Chun-Lin ; Lin, Jium-Ming ; Chang, Shou-Zen</creator><creatorcontrib>Lu, Chun-Lin ; Lin, Jium-Ming ; Chang, Shou-Zen</creatorcontrib><description>A wafer stack structure includes an interlayer, a first wafer, and a second wafer. The interlayer has a first surface and a second surface opposite to the first surface. The intermediate layer includes a dielectric material layer and a redistribution layer embedded in the dielectric material layer. The first wafer is disposed on the first surface of the interlayer. The second wafer is disposed on the second surface of the interlayer. The second wafer is electrically connected to the first wafer through the redistribution layer of the interlayer.</description><language>eng</language><subject>ANTENNAS, i.e. RADIO AERIALS ; BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240423&DB=EPODOC&CC=US&NR=11967558B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240423&DB=EPODOC&CC=US&NR=11967558B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lu, Chun-Lin</creatorcontrib><creatorcontrib>Lin, Jium-Ming</creatorcontrib><creatorcontrib>Chang, Shou-Zen</creatorcontrib><title>Wafer stacking structure and manufacturing method thereof</title><description>A wafer stack structure includes an interlayer, a first wafer, and a second wafer. The interlayer has a first surface and a second surface opposite to the first surface. The intermediate layer includes a dielectric material layer and a redistribution layer embedded in the dielectric material layer. The first wafer is disposed on the first surface of the interlayer. The second wafer is disposed on the second surface of the interlayer. The second wafer is electrically connected to the first wafer through the redistribution layer of the interlayer.</description><subject>ANTENNAS, i.e. RADIO AERIALS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMT0xLLVIoLklMzs7MSwcyikqTS0qLUhUS81IUchPzStMSQXyQXG5qSUZ-ikJJRmpRan4aDwNrWmJOcSovlOZmUHRzDXH20E0tyI9PLS5ITE7NSy2JDw02NLQ0Mzc1tXAyMiZGDQCDAy93</recordid><startdate>20240423</startdate><enddate>20240423</enddate><creator>Lu, Chun-Lin</creator><creator>Lin, Jium-Ming</creator><creator>Chang, Shou-Zen</creator><scope>EVB</scope></search><sort><creationdate>20240423</creationdate><title>Wafer stacking structure and manufacturing method thereof</title><author>Lu, Chun-Lin ; Lin, Jium-Ming ; Chang, Shou-Zen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11967558B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>ANTENNAS, i.e. RADIO AERIALS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Lu, Chun-Lin</creatorcontrib><creatorcontrib>Lin, Jium-Ming</creatorcontrib><creatorcontrib>Chang, Shou-Zen</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lu, Chun-Lin</au><au>Lin, Jium-Ming</au><au>Chang, Shou-Zen</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Wafer stacking structure and manufacturing method thereof</title><date>2024-04-23</date><risdate>2024</risdate><abstract>A wafer stack structure includes an interlayer, a first wafer, and a second wafer. The interlayer has a first surface and a second surface opposite to the first surface. The intermediate layer includes a dielectric material layer and a redistribution layer embedded in the dielectric material layer. The first wafer is disposed on the first surface of the interlayer. The second wafer is disposed on the second surface of the interlayer. The second wafer is electrically connected to the first wafer through the redistribution layer of the interlayer.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US11967558B2 |
source | esp@cenet |
subjects | ANTENNAS, i.e. RADIO AERIALS BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Wafer stacking structure and manufacturing method thereof |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T20%3A59%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Lu,%20Chun-Lin&rft.date=2024-04-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11967558B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |