Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being...

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Hauptverfasser: Briggs, Benjamin David, Clevenger, Lawrence A, Deprospo, Bartlet H, Rizzolo, Michael, Penny, Christopher J, Huang, Huai
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Briggs, Benjamin David
Clevenger, Lawrence A
Deprospo, Bartlet H
Rizzolo, Michael
Penny, Christopher J
Huang, Huai
description A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the cap layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
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