Semiconductor device and method of manufacturing the same

In one embodiment, a semiconductor device includes a first substrate, and a plurality of electrode layers provided above the first substrate and stacked in a first direction. The device further includes a first semiconductor layer extending in the first direction in the plurality of electrode layers...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Nakaki, Hiroshi
Format: Patent
Sprache:eng
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