Semiconductor substrate structure and manufacturing method thereof

A semiconductor substrate structure including a first group of circuit structure and a second group of circuit structure is provided. The first group of circuit structure includes multiple first wiring layers and multiple first conductive connectors, and each of the first conductive connectors inclu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Hu, Dyi-Chung
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Hu, Dyi-Chung
description A semiconductor substrate structure including a first group of circuit structure and a second group of circuit structure is provided. The first group of circuit structure includes multiple first wiring layers and multiple first conductive connectors, and each of the first conductive connectors includes a conductive cap. The second group of circuit structure includes multiple second wiring layers and multiple second conductive connectors. The first group of circuit structure and the second group of circuit structure are electrically connected through bonding of the first conductive connectors and the second conductive connectors to form a multilayer redistribution structure. A manufacturing method of the semiconductor substrate structure is also provided.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11948899B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11948899B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11948899B23</originalsourceid><addsrcrecordid>eNrjZHAKTs3NTM7PSylNLskvUiguTSouKUosSVUAUkCh0qJUhcS8FIXcxLzStEQQPzMvXSE3tSQjP0WhJCO1KDU_jYeBNS0xpziVF0pzMyi6uYY4e-imFuTHpxYXJCan5qWWxIcGGxpamlhYWFo6GRkTowYA2RAzgQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor substrate structure and manufacturing method thereof</title><source>esp@cenet</source><creator>Hu, Dyi-Chung</creator><creatorcontrib>Hu, Dyi-Chung</creatorcontrib><description>A semiconductor substrate structure including a first group of circuit structure and a second group of circuit structure is provided. The first group of circuit structure includes multiple first wiring layers and multiple first conductive connectors, and each of the first conductive connectors includes a conductive cap. The second group of circuit structure includes multiple second wiring layers and multiple second conductive connectors. The first group of circuit structure and the second group of circuit structure are electrically connected through bonding of the first conductive connectors and the second conductive connectors to form a multilayer redistribution structure. A manufacturing method of the semiconductor substrate structure is also provided.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240402&amp;DB=EPODOC&amp;CC=US&amp;NR=11948899B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240402&amp;DB=EPODOC&amp;CC=US&amp;NR=11948899B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hu, Dyi-Chung</creatorcontrib><title>Semiconductor substrate structure and manufacturing method thereof</title><description>A semiconductor substrate structure including a first group of circuit structure and a second group of circuit structure is provided. The first group of circuit structure includes multiple first wiring layers and multiple first conductive connectors, and each of the first conductive connectors includes a conductive cap. The second group of circuit structure includes multiple second wiring layers and multiple second conductive connectors. The first group of circuit structure and the second group of circuit structure are electrically connected through bonding of the first conductive connectors and the second conductive connectors to form a multilayer redistribution structure. A manufacturing method of the semiconductor substrate structure is also provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAKTs3NTM7PSylNLskvUiguTSouKUosSVUAUkCh0qJUhcS8FIXcxLzStEQQPzMvXSE3tSQjP0WhJCO1KDU_jYeBNS0xpziVF0pzMyi6uYY4e-imFuTHpxYXJCan5qWWxIcGGxpamlhYWFo6GRkTowYA2RAzgQ</recordid><startdate>20240402</startdate><enddate>20240402</enddate><creator>Hu, Dyi-Chung</creator><scope>EVB</scope></search><sort><creationdate>20240402</creationdate><title>Semiconductor substrate structure and manufacturing method thereof</title><author>Hu, Dyi-Chung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11948899B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Hu, Dyi-Chung</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hu, Dyi-Chung</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor substrate structure and manufacturing method thereof</title><date>2024-04-02</date><risdate>2024</risdate><abstract>A semiconductor substrate structure including a first group of circuit structure and a second group of circuit structure is provided. The first group of circuit structure includes multiple first wiring layers and multiple first conductive connectors, and each of the first conductive connectors includes a conductive cap. The second group of circuit structure includes multiple second wiring layers and multiple second conductive connectors. The first group of circuit structure and the second group of circuit structure are electrically connected through bonding of the first conductive connectors and the second conductive connectors to form a multilayer redistribution structure. A manufacturing method of the semiconductor substrate structure is also provided.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US11948899B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor substrate structure and manufacturing method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T17%3A15%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Hu,%20Dyi-Chung&rft.date=2024-04-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11948899B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true