Composition for forming silicon-containing resist underlayer film and patterning process

A composition for forming a silicon-containing resist underlayer film contains a compound shown by the following general formula (A-1) and a thermally crosslinkable polysiloxane. R1 represents a methyl group, an ethyl group, a propyl group, an allyl group, or a propargyl group. R2 represents a hydro...

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Bibliographische Detailangaben
Hauptverfasser: Maeda, Kazunori, Kori, Daisuke, Kai, Yusuke
Format: Patent
Sprache:eng
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