Detector material and preparation method thereof
Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern b...
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| creator | Wei, Zhipeng Lin, Fengyuan Wang, Shuangpeng Hao, Qun Jia, Huimin Liao, Lei Su, Shichen Chen, Rui Tang, Jilong Li, Kexue |
| description | Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern by photolithography and etching to form strip growth regions with continuous changes in width. Finally, a molecular beam epitaxy (MBE) technology is used to epitaxially grow the detector material in the strip growth regions under set epitaxy growth conditions. Because of the same mobility of atoms arriving at the surface of the substrate, numbers of atoms migrating to the strip growth regions are different due to different widths of the strip growth regions, such that compositions of the material change with the widths of the strip growth regions or a layer thickness changes with the widths of the strip growth regions. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11929446B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11929446B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11929446B23</originalsourceid><addsrcrecordid>eNrjZDBwSS1JTS7JL1LITSxJLcpMzFFIzEtRKChKLUgsSizJzM9TyE0tychPUSjJSC1KzU_jYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGhpZGliYmZk5GxsSoAQCATCvC</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Detector material and preparation method thereof</title><source>esp@cenet</source><creator>Wei, Zhipeng ; Lin, Fengyuan ; Wang, Shuangpeng ; Hao, Qun ; Jia, Huimin ; Liao, Lei ; Su, Shichen ; Chen, Rui ; Tang, Jilong ; Li, Kexue</creator><creatorcontrib>Wei, Zhipeng ; Lin, Fengyuan ; Wang, Shuangpeng ; Hao, Qun ; Jia, Huimin ; Liao, Lei ; Su, Shichen ; Chen, Rui ; Tang, Jilong ; Li, Kexue</creatorcontrib><description>Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern by photolithography and etching to form strip growth regions with continuous changes in width. Finally, a molecular beam epitaxy (MBE) technology is used to epitaxially grow the detector material in the strip growth regions under set epitaxy growth conditions. Because of the same mobility of atoms arriving at the surface of the substrate, numbers of atoms migrating to the strip growth regions are different due to different widths of the strip growth regions, such that compositions of the material change with the widths of the strip growth regions or a layer thickness changes with the widths of the strip growth regions.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240312&DB=EPODOC&CC=US&NR=11929446B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240312&DB=EPODOC&CC=US&NR=11929446B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wei, Zhipeng</creatorcontrib><creatorcontrib>Lin, Fengyuan</creatorcontrib><creatorcontrib>Wang, Shuangpeng</creatorcontrib><creatorcontrib>Hao, Qun</creatorcontrib><creatorcontrib>Jia, Huimin</creatorcontrib><creatorcontrib>Liao, Lei</creatorcontrib><creatorcontrib>Su, Shichen</creatorcontrib><creatorcontrib>Chen, Rui</creatorcontrib><creatorcontrib>Tang, Jilong</creatorcontrib><creatorcontrib>Li, Kexue</creatorcontrib><title>Detector material and preparation method thereof</title><description>Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern by photolithography and etching to form strip growth regions with continuous changes in width. Finally, a molecular beam epitaxy (MBE) technology is used to epitaxially grow the detector material in the strip growth regions under set epitaxy growth conditions. Because of the same mobility of atoms arriving at the surface of the substrate, numbers of atoms migrating to the strip growth regions are different due to different widths of the strip growth regions, such that compositions of the material change with the widths of the strip growth regions or a layer thickness changes with the widths of the strip growth regions.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBwSS1JTS7JL1LITSxJLcpMzFFIzEtRKChKLUgsSizJzM9TyE0tychPUSjJSC1KzU_jYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGhpZGliYmZk5GxsSoAQCATCvC</recordid><startdate>20240312</startdate><enddate>20240312</enddate><creator>Wei, Zhipeng</creator><creator>Lin, Fengyuan</creator><creator>Wang, Shuangpeng</creator><creator>Hao, Qun</creator><creator>Jia, Huimin</creator><creator>Liao, Lei</creator><creator>Su, Shichen</creator><creator>Chen, Rui</creator><creator>Tang, Jilong</creator><creator>Li, Kexue</creator><scope>EVB</scope></search><sort><creationdate>20240312</creationdate><title>Detector material and preparation method thereof</title><author>Wei, Zhipeng ; Lin, Fengyuan ; Wang, Shuangpeng ; Hao, Qun ; Jia, Huimin ; Liao, Lei ; Su, Shichen ; Chen, Rui ; Tang, Jilong ; Li, Kexue</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11929446B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Wei, Zhipeng</creatorcontrib><creatorcontrib>Lin, Fengyuan</creatorcontrib><creatorcontrib>Wang, Shuangpeng</creatorcontrib><creatorcontrib>Hao, Qun</creatorcontrib><creatorcontrib>Jia, Huimin</creatorcontrib><creatorcontrib>Liao, Lei</creatorcontrib><creatorcontrib>Su, Shichen</creatorcontrib><creatorcontrib>Chen, Rui</creatorcontrib><creatorcontrib>Tang, Jilong</creatorcontrib><creatorcontrib>Li, Kexue</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wei, Zhipeng</au><au>Lin, Fengyuan</au><au>Wang, Shuangpeng</au><au>Hao, Qun</au><au>Jia, Huimin</au><au>Liao, Lei</au><au>Su, Shichen</au><au>Chen, Rui</au><au>Tang, Jilong</au><au>Li, Kexue</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Detector material and preparation method thereof</title><date>2024-03-12</date><risdate>2024</risdate><abstract>Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern by photolithography and etching to form strip growth regions with continuous changes in width. Finally, a molecular beam epitaxy (MBE) technology is used to epitaxially grow the detector material in the strip growth regions under set epitaxy growth conditions. Because of the same mobility of atoms arriving at the surface of the substrate, numbers of atoms migrating to the strip growth regions are different due to different widths of the strip growth regions, such that compositions of the material change with the widths of the strip growth regions or a layer thickness changes with the widths of the strip growth regions.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Detector material and preparation method thereof |
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