Field-effect transistor and method for designing same

A field-effect transistor includes a Ga2O3-based semiconductor layer, a source region and a drain region that are formed inside the Ga2O3-based semiconductor layer, a gate electrode that is formed, via a gate insulating film, on a channel region as the Ga2O3-based semiconductor layer between the sou...

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Bibliographische Detailangaben

Hauptverfasser:	Kase, Tadashi, Yamakoshi, Shigenobu, Uchida, Yuki, Aoki, Kazuo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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