Method of manufacturing microelectronic components

Method of manufacturing microelectronic components

A method is provided for producing a plurality of transistors on a substrate comprising at least two adjacent active areas separated by at least one electrically-isolating area, each transistor of the plurality of transistors including a gate having a silicided portion, and first and second spacers...

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Hauptverfasser: Nemouchi, Fabrice, Fitz, Clemens, Posseme, Nicolas
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Nemouchi, Fabrice
Fitz, Clemens
Posseme, Nicolas
description A method is provided for producing a plurality of transistors on a substrate comprising at least two adjacent active areas separated by at least one electrically-isolating area, each transistor of the plurality of transistors including a gate having a silicided portion, and first and second spacers on either side of the gate, the first spacers being located on sides of the gate and the second spacers being located on sides of the first spacers. The method includes forming the gates of the transistors, forming the first spacers, forming the second spacers, siliciding the gates so as to form the silicided portions of the gates, and removing the second spacers. The removal of the second spacers takes place during the silicidation of the gates and before the silicided portions are fully formed.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of manufacturing microelectronic components
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