Molecular-beam epitaxy system comprising an infrared radiation emitting heater and a thermally conductive backing plate including an infrared-absorbing coating thereon

Methods and systems for growing thin films via molecular-beam epitaxy (MBE) on substrates are provided. The methods and systems utilize a thermally conductive backing plate including an infrared-absorbing coating (IAC) formed, for example, on one side of the thermally conductive backing plate to pro...

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Bibliographische Detailangaben
Hauptverfasser:	Shrekenhamer, David B, Podpirka, Adrian A, Brupbacher, Michael C
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Methods and systems for growing thin films via molecular-beam epitaxy (MBE) on substrates are provided. The methods and systems utilize a thermally conductive backing plate including an infrared-absorbing coating (IAC) formed, for example, on one side of the thermally conductive backing plate to provide an asymmetric emissivity that absorbs infrared radiation (IR) on the side having the IRC and does not on the non-coated side of the thermally conductive backing plate (e.g., refractive metal or alloy). The asymmetric emissivity shields the thin film being deposited on a substrate from the IR during formation.