III-nitride power semiconductor based heterojunction device

An integrated circuit is provided which can sense the drain voltage of an active heterojunction transistor under different conditions and can adjust a driving signal of a gate terminal of the active heterojunction transistor in order to limit conduction losses and/or switching losses.

Bibliographische Detailangaben

Hauptverfasser:	Arnold, Martin, Efthymiou, Loizos, Longobardi, Giorgia, Udrea, Florin, Findlay, John William
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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