III-nitride power semiconductor based heterojunction device

III-nitride power semiconductor based heterojunction device

An integrated circuit is provided which can sense the drain voltage of an active heterojunction transistor under different conditions and can adjust a driving signal of a gate terminal of the active heterojunction transistor in order to limit conduction losses and/or switching losses.

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Bibliographische Detailangaben
Hauptverfasser: Arnold, Martin, Efthymiou, Loizos, Longobardi, Giorgia, Udrea, Florin, Findlay, John William
Format: Patent
Sprache:eng
Schlagworte:
AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit is provided which can sense the drain voltage of an active heterojunction transistor under different conditions and can adjust a driving signal of a gate terminal of the active heterojunction transistor in order to limit conduction losses and/or switching losses.