Single crystal semiconductor structure and method of fabricating the same

A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a sin...

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Bibliographische Detailangaben
Hauptverfasser: Matias, Vladimir, Choi, Junhee, Han, Joohun
Format: Patent
Sprache:eng
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Zusammenfassung:A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness hc.