Plasma etching of mask materials

Exemplary etching methods may include forming a plasma of a fluorine-containing precursor to produce plasma effluents. A first bias frequency may be applied while forming the plasma. The methods may include contacting a substrate housed in a processing region of a semiconductor processing chamber wi...

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Bibliographische Detailangaben

Hauptverfasser:	Chandrachood, Madhavi Rajaram, Yalamanchili, Madhava Rao, Leung, Toi Yue Becky
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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