Apparatus and method for embedding current measurement and ringing suppression in multichip modules

The current disclosure relates to the design of an apparatus for enhancing the operation and reliability of high-power multi-chip modules, which are used in the design and implementation of power electronics converters. This apparatus is especially useful for modules containing recently commercialized, high-performance wide band-gap semiconductors such as Silicon Carbide (SiC), which commonly emit undesirable high-frequency ringing and oscillation in the "Near-RF" spectral band between 1-30 MHz. The disclosed apparatus provides near-complete elimination of this high frequency spectral content, while leaving the desired frequency range (1-100 kHz) of the module unaffected. In addition to the suppression of this undesirable high-frequency content, the disclosed apparatus also provides for accurate, galvanically-isolated, high-bandwidth, real-time current measurement, which is essential for some types of power electronics converters. The apparatus disclosed here provides ringing suppression and current measurement in simple circuit topology that can be implemented compactly inside the geometry of a multi-chip power module.