Method for MRAM top electrode connection

Various embodiments of the present disclosure are directed towards a method for forming a memory device. The method includes forming a first memory cell and a second memory cell over a substrate. A first dielectric layer is formed over and around the first and second memory cells. The first dielectr...

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Bibliographische Detailangaben

Hauptverfasser:	Huang, Sheng-Huang, Chuang, Harry-Hak-Lay, Chen, Sheng-Chang, Wang, Hung Cho
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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