Optoelectronic device and method for manufacturing the same
An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing th...
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| creator | Chen, Chao-Hsing Liao, Chien-Chih Wang, Jia-Kuen Ko, Tsun-Kai Shen, Chien-Fu Tseng, Tzu-Yao |
| description | An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a top view of the optoelectronic device, the first extended portion is located between the fourth electrodes. |
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a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a top view of the optoelectronic device, the first extended portion is located between the fourth electrodes.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD2LyjJT81JTS4pys_LTFZISS3LTE5VSMxLUchNLcnIT1FIyy9SyE3MK01LTC4pLcrMS1coyUhVKE7MTeVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGlgYWluamTkbGxKgBANC1L9Y</recordid><startdate>20240220</startdate><enddate>20240220</enddate><creator>Chen, Chao-Hsing</creator><creator>Liao, Chien-Chih</creator><creator>Wang, Jia-Kuen</creator><creator>Ko, Tsun-Kai</creator><creator>Shen, Chien-Fu</creator><creator>Tseng, Tzu-Yao</creator><scope>EVB</scope></search><sort><creationdate>20240220</creationdate><title>Optoelectronic device and method for manufacturing the same</title><author>Chen, Chao-Hsing ; Liao, Chien-Chih ; Wang, Jia-Kuen ; Ko, Tsun-Kai ; Shen, Chien-Fu ; Tseng, Tzu-Yao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11908975B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, Chao-Hsing</creatorcontrib><creatorcontrib>Liao, Chien-Chih</creatorcontrib><creatorcontrib>Wang, Jia-Kuen</creatorcontrib><creatorcontrib>Ko, Tsun-Kai</creatorcontrib><creatorcontrib>Shen, Chien-Fu</creatorcontrib><creatorcontrib>Tseng, Tzu-Yao</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Chao-Hsing</au><au>Liao, Chien-Chih</au><au>Wang, Jia-Kuen</au><au>Ko, Tsun-Kai</au><au>Shen, Chien-Fu</au><au>Tseng, Tzu-Yao</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Optoelectronic device and method for manufacturing the same</title><date>2024-02-20</date><risdate>2024</risdate><abstract>An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a top view of the optoelectronic device, the first extended portion is located between the fourth electrodes.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Optoelectronic device and method for manufacturing the same |
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