Memory device detecting leakage current and operation method thereof

Disclosed is an operation method of a memory device which includes floating a first driving line corresponding to a first word line from the first word line and precharging the first driving line with a first voltage, floating the first driving line from the first voltage to sense a first voltage va...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Park, Hyunkook
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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