Front end buffer having ferroelectric field effect transistor (FeFET) based memory

A memory device formed of ferroelectric field effect transistors (FeFETs). The memory device can be used as a front end buffer, such as in a data storage device having a non-volatile memory (NVM). A controller can be configured to transfer user data between the NVM and an external client (host) via...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	El-Batal, Mohamad, Mehta, Darshana H, Trantham, Jon D, Viraraghavan, Praveen, Gilbert, Ian J, Dykes, John W, Kalarickal, Sangita Shreedharan, Totin, Matthew J
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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