Self-aligned contact air gap formation

In one example aspect, a method for integrated circuit (IC) fabrication comprises providing a device structure including a substrate, a source/drain (S/D) feature on the substrate, a gate stack on the substrate, a contact hole over the S/D feature; and a dummy feature over the S/D feature and betwee...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lee, Kai-Hsuan, Lai, Bo-Yu, Lin, Yih-Ann, Chen, Yen-Ming, Yang, Feng-Cheng, Yeong, Sai-Hooi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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