Method of manufacturing semiconductor optical device and intermediate article of semiconductor optical device
A method of manufacturing a semiconductor optical device of this disclosure includes the steps of forming an etch stop layer on an InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and forming a semiconductor laminate on the etch stop layer by stacking a plurality of In...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Kadowaki, Yoshitaka Ikuta, Tetsuya Koshika, Yuta |
| description | A method of manufacturing a semiconductor optical device of this disclosure includes the steps of forming an etch stop layer on an InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and forming a semiconductor laminate on the etch stop layer by stacking a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P. Further, an intermediate article of a semiconductor optical device of the present disclosure includes an InP growth substrate; an etch stop layer formed on the InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and a semiconductor laminate formed on the etch stop layer, including a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P stacked one another. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11894502B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11894502B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11894502B23</originalsourceid><addsrcrecordid>eNqNjLEKAjEQRNNYiPoP6wcI3qmgraLYWKn1sWz2NJBsQrLx-z3BWqwG5s2bsQkX1me0EHsIKLVH0pqdPKBwcBTFVtKYISZ1hB4svxwxoFhwopwDW4c6FHngnj83v8SpGfXoC8--OTHz0_F2OC84xY5LQmJh7e7Xptnu1ptlu29X_2ze-ulDSw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of manufacturing semiconductor optical device and intermediate article of semiconductor optical device</title><source>esp@cenet</source><creator>Kadowaki, Yoshitaka ; Ikuta, Tetsuya ; Koshika, Yuta</creator><creatorcontrib>Kadowaki, Yoshitaka ; Ikuta, Tetsuya ; Koshika, Yuta</creatorcontrib><description>A method of manufacturing a semiconductor optical device of this disclosure includes the steps of forming an etch stop layer on an InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and forming a semiconductor laminate on the etch stop layer by stacking a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P. Further, an intermediate article of a semiconductor optical device of the present disclosure includes an InP growth substrate; an etch stop layer formed on the InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and a semiconductor laminate formed on the etch stop layer, including a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P stacked one another.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240206&DB=EPODOC&CC=US&NR=11894502B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240206&DB=EPODOC&CC=US&NR=11894502B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kadowaki, Yoshitaka</creatorcontrib><creatorcontrib>Ikuta, Tetsuya</creatorcontrib><creatorcontrib>Koshika, Yuta</creatorcontrib><title>Method of manufacturing semiconductor optical device and intermediate article of semiconductor optical device</title><description>A method of manufacturing a semiconductor optical device of this disclosure includes the steps of forming an etch stop layer on an InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and forming a semiconductor laminate on the etch stop layer by stacking a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P. Further, an intermediate article of a semiconductor optical device of the present disclosure includes an InP growth substrate; an etch stop layer formed on the InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and a semiconductor laminate formed on the etch stop layer, including a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P stacked one another.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKAjEQRNNYiPoP6wcI3qmgraLYWKn1sWz2NJBsQrLx-z3BWqwG5s2bsQkX1me0EHsIKLVH0pqdPKBwcBTFVtKYISZ1hB4svxwxoFhwopwDW4c6FHngnj83v8SpGfXoC8--OTHz0_F2OC84xY5LQmJh7e7Xptnu1ptlu29X_2ze-ulDSw</recordid><startdate>20240206</startdate><enddate>20240206</enddate><creator>Kadowaki, Yoshitaka</creator><creator>Ikuta, Tetsuya</creator><creator>Koshika, Yuta</creator><scope>EVB</scope></search><sort><creationdate>20240206</creationdate><title>Method of manufacturing semiconductor optical device and intermediate article of semiconductor optical device</title><author>Kadowaki, Yoshitaka ; Ikuta, Tetsuya ; Koshika, Yuta</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11894502B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kadowaki, Yoshitaka</creatorcontrib><creatorcontrib>Ikuta, Tetsuya</creatorcontrib><creatorcontrib>Koshika, Yuta</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kadowaki, Yoshitaka</au><au>Ikuta, Tetsuya</au><au>Koshika, Yuta</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of manufacturing semiconductor optical device and intermediate article of semiconductor optical device</title><date>2024-02-06</date><risdate>2024</risdate><abstract>A method of manufacturing a semiconductor optical device of this disclosure includes the steps of forming an etch stop layer on an InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and forming a semiconductor laminate on the etch stop layer by stacking a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P. Further, an intermediate article of a semiconductor optical device of the present disclosure includes an InP growth substrate; an etch stop layer formed on the InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and a semiconductor laminate formed on the etch stop layer, including a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P stacked one another.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US11894502B2 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method of manufacturing semiconductor optical device and intermediate article of semiconductor optical device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T23%3A56%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kadowaki,%20Yoshitaka&rft.date=2024-02-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11894502B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |