Method for setting a nitrogen concentration of a silicon epitaxial film in manufacturing an epitaxial silicon wafer

Method for setting a nitrogen concentration of a silicon epitaxial film in manufacturing an epitaxial silicon wafer

A manufacturing method of an epitaxial silicon wafer includes forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the...

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Hauptverfasser: Kodani, Kazuya, Torigoe, Kazuhisa, Ono, Toshiaki
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Kodani, Kazuya
Torigoe, Kazuhisa
Ono, Toshiaki
description A manufacturing method of an epitaxial silicon wafer includes forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film to heat treatment in a nitrogen atmosphere.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for setting a nitrogen concentration of a silicon epitaxial film in manufacturing an epitaxial silicon wafer
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