Integrated circuit chip including a passivation nitride layer in contact with a high voltage bonding pad and method of making

A back end of line (BEOL) structure for an integrated circuit chip includes a last metal structure providing a bonding pad. A passivation structure over the bonding pad includes a first opening extending exposing an upper surface of the bonding pad. A conformal nitride layer extends over the passiva...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Mariani, Simone Dario, Doria, Daria, Pizzi, Elisabetta
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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