Semiconductor device with isolation and/or protection structures
The present disclosure relates to a semiconductor device with isolation and/or protection structures. A semiconductor device can include a substrate, a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, and an isolation struc...
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| creator | Radulescu, Fabian Zhao, Lei |
| description | The present disclosure relates to a semiconductor device with isolation and/or protection structures. A semiconductor device can include a substrate, a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, and an isolation structure formed on the substrate. The isolation structure can be formed on the substrate between the first transistor and the second transistor. The isolation structure can be configured to isolate the first transistor and the second transistor. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11887945B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11887945B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11887945B23</originalsourceid><addsrcrecordid>eNrjZHAITs3NTM7PSylNLskvUkhJLctMTlUozyzJUMgszs9JLMnMz1NIzEvRB0oWFOWXpCaDRYpLioAaSotSi3kYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXxosKGhhYW5pYmpk5ExMWoAOZkyfA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device with isolation and/or protection structures</title><source>esp@cenet</source><creator>Radulescu, Fabian ; Zhao, Lei</creator><creatorcontrib>Radulescu, Fabian ; Zhao, Lei</creatorcontrib><description>The present disclosure relates to a semiconductor device with isolation and/or protection structures. A semiconductor device can include a substrate, a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, and an isolation structure formed on the substrate. The isolation structure can be formed on the substrate between the first transistor and the second transistor. The isolation structure can be configured to isolate the first transistor and the second transistor.</description><language>eng</language><subject>AMPLIFIERS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240130&DB=EPODOC&CC=US&NR=11887945B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240130&DB=EPODOC&CC=US&NR=11887945B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Radulescu, Fabian</creatorcontrib><creatorcontrib>Zhao, Lei</creatorcontrib><title>Semiconductor device with isolation and/or protection structures</title><description>The present disclosure relates to a semiconductor device with isolation and/or protection structures. A semiconductor device can include a substrate, a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, and an isolation structure formed on the substrate. The isolation structure can be formed on the substrate between the first transistor and the second transistor. The isolation structure can be configured to isolate the first transistor and the second transistor.</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAITs3NTM7PSylNLskvUkhJLctMTlUozyzJUMgszs9JLMnMz1NIzEvRB0oWFOWXpCaDRYpLioAaSotSi3kYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXxosKGhhYW5pYmpk5ExMWoAOZkyfA</recordid><startdate>20240130</startdate><enddate>20240130</enddate><creator>Radulescu, Fabian</creator><creator>Zhao, Lei</creator><scope>EVB</scope></search><sort><creationdate>20240130</creationdate><title>Semiconductor device with isolation and/or protection structures</title><author>Radulescu, Fabian ; Zhao, Lei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11887945B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Radulescu, Fabian</creatorcontrib><creatorcontrib>Zhao, Lei</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Radulescu, Fabian</au><au>Zhao, Lei</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device with isolation and/or protection structures</title><date>2024-01-30</date><risdate>2024</risdate><abstract>The present disclosure relates to a semiconductor device with isolation and/or protection structures. A semiconductor device can include a substrate, a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, and an isolation structure formed on the substrate. The isolation structure can be formed on the substrate between the first transistor and the second transistor. The isolation structure can be configured to isolate the first transistor and the second transistor.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device with isolation and/or protection structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T01%3A33%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Radulescu,%20Fabian&rft.date=2024-01-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11887945B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |