Memory cell sensing

Memory cell sensing

Sensing devices might include a first voltage node configured to receive a first voltage level, a second voltage node configured to receive a second voltage level lower than the first voltage level, a p-type field-effect transistor (pFET) selectively connected to a data line, and a sense node select...

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Hauptverfasser: Siau, Chang H, Nguyen, Hao T
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Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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Nguyen, Hao T
description Sensing devices might include a first voltage node configured to receive a first voltage level, a second voltage node configured to receive a second voltage level lower than the first voltage level, a p-type field-effect transistor (pFET) selectively connected to a data line, and a sense node selectively connected to the pFET. The pFET might be connected between the first voltage node and the data line, between the second voltage node and the data line, and between the first voltage node and the data line. Memories might have controllers configured to cause the memories to determine whether a memory cell has an intended threshold voltage using similar sensing devices.
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title Memory cell sensing
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