Method for fabricating fin structure for fin field effect transistor

The invention provides a method for fabricating a fin structure for fin field effect transistor, including following steps. Providing a substrate, including a fin structure having a silicon fin and a single mask layer just on a top of the silicon fin, the single mask layer being as a top portion of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Huang, Hung Jen, Su, Shih-Wei, Chuang, Pi-Hung, Han, Hsin Min, Chiu, Ming Shu, Huang, Wei-Hao, Huang, Ping Wei, Wang, Shao-Wei, Feng, Hao Che
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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