Asymmetric stackup structure for SoC package substrates

An asymmetric stackup structure for an SoC package substrate is disclosed. The package substrate may include a substrate with one or more insulating material layers. A first recess may be formed in an upper surface of the substrate. The recess may be formed down to a conductive layer in the substrat...

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Hauptverfasser: Kao, Yifan, Deng, Yikang, Kim, Taegui, Hsu, Jun Chung
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creator Kao, Yifan
Deng, Yikang
Kim, Taegui
Hsu, Jun Chung
description An asymmetric stackup structure for an SoC package substrate is disclosed. The package substrate may include a substrate with one or more insulating material layers. A first recess may be formed in an upper surface of the substrate. The recess may be formed down to a conductive layer in the substrate. An integrated passive device may be positioned in the recess. A plurality of build-up layers may be formed on top of the substrate. At least one via path may be formed through the build-up layers and the substrate to connect contacts on the lower surface of the substrate to contacts on the upper surface of the build-up layers.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Asymmetric stackup structure for SoC package substrates
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