Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same

Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same

A mask-integrated surface protective tape, which has at least a substrate film and a mask material layer, wherein the mask material layer is provided directly on the substrate film, or is provided on the substrate film through a temporary-adhesive layer, and wherein a parallel ray transmittance of t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Uchiyama, Tomoaki, Akutsu, Akira
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Uchiyama, Tomoaki
Akutsu, Akira
description A mask-integrated surface protective tape, which has at least a substrate film and a mask material layer, wherein the mask material layer is provided directly on the substrate film, or is provided on the substrate film through a temporary-adhesive layer, and wherein a parallel ray transmittance of the mask material layer at a wavelength region of 355 nm is 30% or less; and a method of producing a semiconductor chip.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11862504B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11862504B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11862504B23</originalsourceid><addsrcrecordid>eNqNjbsKwkAQRdNYiPoPY2_AxAfWimJjpdZh2L1JFs3usjPx-03AD7A6XM6FM83sjeWVO69oEissSZ9qNqCYgsKo-4CUI1bE3lIHbYOlUI_a9sb5hpgEnTPBD1tDItO6SL2MSluQcId5Nqn5LVj8OMuWl_PjdM0RQwWJQ89Dq-e9KA77crfeHsvNP58v4NA-3g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same</title><source>esp@cenet</source><creator>Uchiyama, Tomoaki ; Akutsu, Akira</creator><creatorcontrib>Uchiyama, Tomoaki ; Akutsu, Akira</creatorcontrib><description>A mask-integrated surface protective tape, which has at least a substrate film and a mask material layer, wherein the mask material layer is provided directly on the substrate film, or is provided on the substrate film through a temporary-adhesive layer, and wherein a parallel ray transmittance of the mask material layer at a wavelength region of 355 nm is 30% or less; and a method of producing a semiconductor chip.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240102&amp;DB=EPODOC&amp;CC=US&amp;NR=11862504B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240102&amp;DB=EPODOC&amp;CC=US&amp;NR=11862504B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Uchiyama, Tomoaki</creatorcontrib><creatorcontrib>Akutsu, Akira</creatorcontrib><title>Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same</title><description>A mask-integrated surface protective tape, which has at least a substrate film and a mask material layer, wherein the mask material layer is provided directly on the substrate film, or is provided on the substrate film through a temporary-adhesive layer, and wherein a parallel ray transmittance of the mask material layer at a wavelength region of 355 nm is 30% or less; and a method of producing a semiconductor chip.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjbsKwkAQRdNYiPoPY2_AxAfWimJjpdZh2L1JFs3usjPx-03AD7A6XM6FM83sjeWVO69oEissSZ9qNqCYgsKo-4CUI1bE3lIHbYOlUI_a9sb5hpgEnTPBD1tDItO6SL2MSluQcId5Nqn5LVj8OMuWl_PjdM0RQwWJQ89Dq-e9KA77crfeHsvNP58v4NA-3g</recordid><startdate>20240102</startdate><enddate>20240102</enddate><creator>Uchiyama, Tomoaki</creator><creator>Akutsu, Akira</creator><scope>EVB</scope></search><sort><creationdate>20240102</creationdate><title>Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same</title><author>Uchiyama, Tomoaki ; Akutsu, Akira</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11862504B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Uchiyama, Tomoaki</creatorcontrib><creatorcontrib>Akutsu, Akira</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Uchiyama, Tomoaki</au><au>Akutsu, Akira</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same</title><date>2024-01-02</date><risdate>2024</risdate><abstract>A mask-integrated surface protective tape, which has at least a substrate film and a mask material layer, wherein the mask material layer is provided directly on the substrate film, or is provided on the substrate film through a temporary-adhesive layer, and wherein a parallel ray transmittance of the mask material layer at a wavelength region of 355 nm is 30% or less; and a method of producing a semiconductor chip.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US11862504B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T10%3A08%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Uchiyama,%20Tomoaki&rft.date=2024-01-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11862504B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true