Wrap-around contact on FinFET
A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper s...
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| creator | Sun, Sey-Ping Hsu, Chen-Feng Ko, Chih-Hsin Wann, Clement Hsingjen Shih, Ding-Kang Huang, Gin-Chen Chang, Meng-Chun Wang, Sung-Li Chen, Neng-Kuo Lin, Yi-An Lin, Hau-Yu |
| description | A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer. |
| format | Patent |
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The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231226&DB=EPODOC&CC=US&NR=11854898B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231226&DB=EPODOC&CC=US&NR=11854898B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Sun, Sey-Ping</creatorcontrib><creatorcontrib>Hsu, Chen-Feng</creatorcontrib><creatorcontrib>Ko, Chih-Hsin</creatorcontrib><creatorcontrib>Wann, Clement Hsingjen</creatorcontrib><creatorcontrib>Shih, Ding-Kang</creatorcontrib><creatorcontrib>Huang, Gin-Chen</creatorcontrib><creatorcontrib>Chang, Meng-Chun</creatorcontrib><creatorcontrib>Wang, Sung-Li</creatorcontrib><creatorcontrib>Chen, Neng-Kuo</creatorcontrib><creatorcontrib>Lin, Yi-An</creatorcontrib><creatorcontrib>Lin, Hau-Yu</creatorcontrib><title>Wrap-around contact on FinFET</title><description>A fin structure is on a substrate. 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The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Wrap-around contact on FinFET |
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