Manufacturing method of a semiconductor device with efficient edge structure

A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Rascuna', Simone, Guarnera, Alfio, Fragapane, Leonardo, Zanetti, Edoardo, Tringali, Cristina, Saggio, Mario Giuseppe
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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