Electrical fuse one time programmable (OTP) memory

An eFuse cell is provided. The eFuse cell may include a first PMOS transistor and a first NMOS transistor configured to receive a programmed state selection (BLOWB) signal, a second PMOS transistor and a second NMOS transistor configured to receive a write word line bar (WWLB) for a program operatio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Cho, Jong Min, Park, Sung Bum, Park, Seong Jun, Ahn, Kee Sik
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!