Bipolar junction transistor with gate over terminals

Embodiments include a first set of fins having an emitter of a bipolar junction transistor (BJT) disposed over the first set of fins, a second set of fins having a base of the BJT disposed over the second set of fins, and a third set of fins having a collector of the BJT disposed over the third set...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Su, Zi-Ang, Leung, Ying-Keung, Li, Ming-Shuan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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